http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111599931-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2020-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111599931-B |
| titleOfInvention | An image display device, a quantum dot light-emitting diode and a manufacturing method thereof |
| abstract | An image display device, a quantum dot light-emitting diode and a manufacturing method thereof belong to the field of display equipment. The quantum dot light-emitting diode includes: an anode layer; a hole transport layer formed on the anode; a quantum dot light-emitting layer formed on the hole transport layer, containing quantum dots and a first inorganic salt, the first inorganic salt includes Bicarbonate and/or bisulfite; electron transport layer, formed on the quantum dot light-emitting layer, containing metal oxide and borohydride; cathode layer, formed on the electron transport layer. The quantum dot light emitting diode can be processed to achieve improved device efficiency and lifetime. |
| priorityDate | 2020-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 91.