http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111596137-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-08 |
| filingDate | 2020-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111596137-B |
| titleOfInvention | Extraction method of source-drain resistance of field effect transistor |
| abstract | The invention discloses a method for extracting source-drain resistance of a field effect transistor, comprising the steps of: step 1: testing to obtain a first electrical characteristic curve formed by the absolute value of the drain current and the gate voltage of the linear region of the field effect transistor, and extracting the linear region threshold voltage; step 2, select multiple sampling points in the high grid voltage area, calculate the reciprocal of the absolute value of the difference between the grid voltage corresponding to each sampling point and the threshold voltage of the linear area and use it as the first parameter; step 3, calculate each sampling point The ratio of the drain voltage to the drain current is taken as the total resistance; step 4, form a second relationship curve according to the first parameter and total resistance of each sampling point; step 5, extend the second relationship curve and intersect it with the vertical axis, Take the intercept as the source-drain resistance. The invention can extract the source-drain resistance for a single transistor, and is suitable for field effect transistors with uniform or non-uniform channel doping, which not only saves the test area, but also improves the test speed and the resistance extraction precision. |
| priorityDate | 2020-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.