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filingDate 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d588f8ef98888e5497a4b95e15d5562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e04a9df4eb98e080b971c08f684fb128
publicationDate 2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111564544-A
titleOfInvention Ultraviolet LED chip epitaxial structure, preparation method thereof and chip
abstract The invention discloses an ultraviolet LED chip epitaxial structure, which comprises: a substrate; an epitaxial layer disposed on the substrate; the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged on the substrate; a refractive layer disposed on the second semiconductor layer; a current spreading layer disposed on the refraction layer; the refractive index of the refractive layer is smaller than that of the second semiconductor layer. The invention also discloses a preparation method of the ultraviolet LED chip epitaxial structure and an LED chip using the epitaxial structure. By implementing the invention, the total reflection effect of the ultraviolet LED chip can be effectively reduced, and the light efficiency is improved.
priorityDate 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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