| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c37b2841ba46658971f621a5069401c8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 |
| filingDate |
2018-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bf617c3a9fcdf47bde4ea63b379cb46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71be8fa73b531814c0dafa50e6985fcf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_560792b70157d130a242e57ef8698c8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_959122d6ef9151529043d14d8b64d6d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3564f64c05f6cc863ca6d4353ca80b60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6301048513922ec23d7eb10132ef8e79 |
| publicationDate |
2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-111527237-A |
| titleOfInvention |
Precursor solution for thin film deposition and thin film formation method using the same |
| abstract |
The present invention relates to a precursor solution for thin film deposition consisting of a functional solvent selected from liquid phase alkenes or liquid phase alkynes capable of dissolving metal halides at room temperature and soluble in said functional A solvent is formed of a metal halide that exists in a liquid phase at room temperature, thereby showing an effect of improving the film thickness uniformity of the thin film while solving the problem caused by the halogen gas generated in the chamber during the deposition process. |
| priorityDate |
2017-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |