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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2020-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111518561-B
titleOfInvention Silicon etchant and application thereof
abstract The invention relates to a silicon etchant with high silicon/silicon dioxide etching selectivity ratio and application thereof. The silicon etchant comprises at least one ketal compound and at least one quaternary ammonium hydroxide, wherein the ketal compound accounts for 20-99 wt% of the total weight of the silicon etchant, and the quaternary ammonium hydroxide accounts for 0.1-10 wt%.
priorityDate 2019-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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