http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111483974-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d560ecc59085a74dc26d4871103b2421 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0292 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0278 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0214 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00349 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01D21-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01D21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02 |
| filingDate | 2020-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4439ecacb7486d58623df534a5154584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edead621ed9786facbfc3395c2a290a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f1b3d52b2312b5dad564fd1ec80f2f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9e1a9b6b3de612e4d7a226d30c3dc53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_445d4eefc7cd4b0b3c7d08785ec0af46 |
| publicationDate | 2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111483974-A |
| titleOfInvention | MEMS single-chip integrated flow temperature and humidity chemical sensor and process |
| abstract | A MEMS single chip integrates flow temperature humidity chemical multi-sensor, silicon wafer is the substrate of the whole device as the supporting structure; the insulating layer is made of silicon nitride or silicon oxynitride, has a plate-shaped structure, plays an insulating role, and insulates and isolates the metal film from the silicon wafer; the sensitive material layer is arranged on the metal film; the cavity is formed by etching the interior of the wafer from the back side or the front side of the wafer; the temperature sensor, the gas mass flow sensor, the humidity sensor and the gas chemical sensor are integrated on the metal film. A MEMS single chip integrates the preparation method of the chemical multiple sensor of flow temperature humidity, the insulating layer is formed by silicon nitride or silicon oxynitride, the insulating isolation metal film and silicon wafer; the sensitive material layer is deposited by a physical vapor deposition technology and then prepared by a photoetching, stripping or etching technology. The invention has the advantages that: the finished product has perfect functions, small volume and high precision. |
| priorityDate | 2020-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.