http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111477744-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
| filingDate | 2020-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111477744-B |
| titleOfInvention | A metal-SAM-organic semiconductor composite structure and preparation method and application in electronic devices |
| abstract | The invention relates to a metal-SAM-organic semiconductor composite structure, a preparation method and an application in electronic devices. It includes a metal layer, a self-assembled monolayer, and an organic semiconductor layer. The SAM is located between the metal layer and the organic semiconductor layer. The SAM is composed of substances whose end groups are sulfur groups. The molecular formula is HS(CH 2 ) n R, and n is The length of the carbon chain of the SAM molecule, R is a polar functional group, and the sulfur element of the SAM and the metal layer are connected by chemical bonds at the interface. The preparation method includes preparing a metal layer, immersing the metal layer in a SAM solution to obtain a metal layer with a surface-assembled SAM film; and then forming an organic semiconductor layer on the surface of the SAM film. The preparation method of the organic semiconductor layer is a vacuum evaporation method or a silicon substrate deposition transfer method. Significantly improving the heat transfer efficiency at the interface is of great significance for improving the heat dissipation performance of organic electronic devices. |
| priorityDate | 2020-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.