http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111417221-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_711690015f2700e77dd16cbe47c6db52 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B3-06 |
| filingDate | 2020-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cb9bc5f3f7726ac5af4a5296542fa5b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87fb889c8ce61f919d2166d397b0e0cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50e2ff0af8613b6669bab2e34aaffb97 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_130b37377ac1ee467a20a1c3c41a1b22 |
| publicationDate | 2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111417221-A |
| titleOfInvention | Novel high-insulation isolation double-sided heating platform for testing flat-plate type power semiconductor device |
| abstract | The invention relates to a novel high-insulation isolation double-sided heating platform for testing a flat plate type power semiconductor device. The device comprises a gate pressure frame structure, a heating system and a temperature acquisition system; the heating system comprises an upper heating system and a lower heating system, the bottom of the upper isolation plate is provided with the upper heating system, the top of the lower isolation plate is provided with the lower heating system, and the lower heating system is provided with a device to be tested; the upper heating system and the lower heating system are respectively connected with the temperature acquisition system. The invention carries out a series of attack and breakthrough on a plurality of technical difficulties. Therefore, the more accurate and stable test effect of the flat-plate type power semiconductor device is ensured. The invention can realize double-sided efficient high-precision heating for the flat-plate type power semiconductor device, can achieve the effect of high-voltage isolation so as to facilitate a test system to test various electrical parameters of the device, and can realize heating and temperature control for the platform by an external temperature control system. The invention has the characteristics of strong applicability, flexible and convenient operation, high production efficiency, energy conservation, environmental protection and the like. |
| priorityDate | 2020-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.