http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111416001-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D1-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2020-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111416001-B |
| titleOfInvention | A kind of passivation glue, passivation method and passivation equipment |
| abstract | Embodiments of the present invention provide a passivation adhesive, a passivation method and a passivation device, which relate to the technical field of solar photovoltaics. The passivation glue includes: a silicon oxide precursor solution, and 3-10g ascorbic acid powder and 90-100g thiourea are added to each liter of the silicon oxide precursor solution to form the passivation glue; the silicon oxide precursor solution includes: orthosilicic acid Tetraethyl ester, methyltriethoxysilane, acid-base catalyst, solvent of tetraethyl orthosilicate, deionized water; wherein, in the silicon oxide precursor solution, the mass percentage of the acid-base catalyst is less than 1 %, the mass percentages of the solvent of tetraethyl orthosilicate, methyltriethoxysilane, tetraethyl orthosilicate, and deionized water are respectively: 4%-10%, 2%-5%, 50% %～65%, 10%～15%. The passivation glue of the present application reduces the reaction time for forming the SiO 2 passivation layer, improves the wettability of the SiO 2 passivation layer, makes the SiO 2 passivation layer not easy to crack, and the thickness of the SiO 2 passivation layer is large, which is difficult for cutting The mask has a good passivation effect. |
| priorityDate | 2020-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.