http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111384307-B
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-311 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
filingDate | 2018-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2021-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-111384307-B |
titleOfInvention | Preparation method of quantum dot light-emitting diode |
abstract | The present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps: providing a substrate provided with an electron transport layer; depositing a solution on the surface of the electron transport layer, leaving it to stand until the electron transport layer is infiltrated, and then performing drying treatment , the solution includes a host solvent and a solute dissolved in the host solvent, the polarity of the solute is greater than the polarity of the host solvent, and the solution does not dissolve the electron transport material in the electron transport layer; Other film layers are prepared on the electron transport layer treated with the mixed solvent to prepare a quantum dot light emitting diode, and the quantum dot light emitting diode at least includes the following structures: an anode and a cathode arranged oppositely, arranged on the anode and the The quantum dot light-emitting layer between the cathodes, and the electron transport layer disposed between the quantum dot light-emitting layer and the cathode. |
priorityDate | 2018-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 94.