http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111384267-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b02fb4923b61a06d4b0c40ec8dd01d2
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-164
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
filingDate 2018-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38372395a9a1b97b24f2ccf4ba3e7023
publicationDate 2020-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111384267-A
titleOfInvention Preparation method of graphene quantum dot film, light-emitting diode and preparation method thereof
abstract The invention belongs to the technical field of display, and in particular relates to a preparation method of a graphene quantum dot film, a light emitting diode and a preparation method thereof. The preparation method of the graphene quantum dot film includes the following steps: providing a graphene quantum dot solution, mixing the graphene quantum dot solution with a treatment agent, and the treatment agent is an oxidizing agent or a reducing agent, and the treatment time is 10s~1h, Obtaining a doped graphene quantum dot solution, forming the doped graphene quantum dot solution into a film to obtain a doped graphene quantum dot film; or, providing a graphene quantum dot solution, and depositing the graphene quantum dot solution on a substrate above, drying treatment is performed to obtain a graphene quantum dot film, the graphene quantum dot film is treated with a treatment agent, the treatment agent is an oxidizing agent or a reducing agent, and the treatment time is 10s~1h, and the doped graphene quantum dot film is obtained .
priorityDate 2018-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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