http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111380633-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_217f2be73fd6be0be36dd55803d3bec5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L1-25 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L1-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-25 |
| filingDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_342ba70a9e4652035a318d73f157121e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_457e67d9a3193f5683342108a2c3301b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14650d138d8ca26e06111d380aee8cdf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbd2fea616d405ae4c22bd9e1cb122b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_080d63774993549b24345e7bdb17c538 |
| publicationDate | 2020-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111380633-A |
| titleOfInvention | Cross-scale film stress test system and test method |
| abstract | The invention designs a cross-scale film stress test system and a test method, wherein a sample film is firstly placed on a sample plate, light signals are changed into amplified electric signals after being received and processed by an array line CCD (charge coupled device) through the reflected light of helium neon laser passing through the uneven film, the warping degree is obtained through computer calculation, the macroscopic stress of the film is obtained after formula derivation, and the region needing further measurement is determined. The local microscopic stresses are then measured using the X-ray diffraction principle, without moving the specimen. The X-ray is reflected by the crystal faces to obtain a plurality of beams of diffraction lines, the deformation among the crystal faces is obtained by utilizing the diffraction condition of the X-ray, and the stress on the micro-crystal is obtained by calculation. The technical method of the invention can greatly save the time and materials for monitoring the macroscopic warping condition and the microscopic grain arrangement state of the film material, and realize the detection of the stress state of the film material according to the measurement result. The method has the advantages of simple and quick operation, time and cost saving and wide application range. |
| priorityDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.