http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111379027-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111379027-B |
| titleOfInvention | Gallium arsenide wafer and preparation method thereof |
| abstract | The invention relates to a gallium arsenide wafer, the surface of which has a sulphur content of less than 2 x 10 15 Atom/cm 3 Preferably less than 5X 10 14 Atom/cm 3 The sulfur content of the wafer surface was determined by the detection method defined in section III of the examples of the present specification. The invention also relates to a preparation method of the gallium arsenide wafer, which comprises the following steps: 1) soaking and cleaning the surface of the wafer by using acid or alkali solution; 2) performing chemical mechanical polishing on the wafer; 3) after polishing, oxidizing the surface of the wafer by using an oxidizing agent; 4) treating the wafer with alkali solution, and then cleaning the wafer with deionized water; 5) the wafer is treated by SC-1 solution and then is washed by deionized water; 6) drying the obtained wafer; 7) treating the surface of the wafer by using the oxidant again; 8) nitrogen or vacuum packaging. |
| priorityDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.