http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111370591-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 |
| filingDate | 2020-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a61e6e750322efcc2b0bf909e15d1216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c46ec3e346e5c12ea99eb4e179b89ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66f66a86a452bdb5e57301c77174a147 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f564bdfdbaa99bed38818a6f73caddd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a7f817a71022e1d63187c2139644492 |
| publicationDate | 2020-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111370591-A |
| titleOfInvention | A kind of top emission silicon-based perovskite light-emitting diode and preparation method thereof |
| abstract | The invention discloses a top-emission silicon-based perovskite light-emitting diode. A silicon wafer is used as a device substrate, and a bottom metal electrode, a transition layer, a hole transport layer, a perovskite light-emitting layer and a modification are sequentially arranged on the silicon wafer. layer, electron transport layer, transparent electrode and anti-reflection dielectric layer. The invention also discloses a preparation method of the light-emitting diode: a silicon wafer is used as a device substrate, a bottom metal electrode is vapor-deposited on this basis, a layer of transition layer is prepared by a magnetron sputtering method, and then a transition layer is sequentially deposited on the transition layer. The hole transport layer, the perovskite light-emitting layer and the modification layer are spin-coated, and after the spin-coating is completed, the electron transport layer, the transparent electrode and the anti-reflection medium are sequentially prepared by means of vacuum evaporation. The light-emitting diode solves the problem of insufficient matching of energy bands of p-type silicon wafers; overcomes the difficulty that the hole transport layer is not uniform in properties on different substrates; and improves the performance as much as possible on the premise of ensuring the normal injection of current and not damaging the perovskite layer. The light extraction rate thus improves the external quantum efficiency of the device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112510162-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112490308-A |
| priorityDate | 2020-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.