http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111370495-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2018-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-111370495-B |
titleOfInvention | Thin film transistor active layer ink and preparation method of thin film transistor |
abstract | The invention discloses a thin film transistor active layer ink and a preparation method of a thin film transistor. The overall viscosity of the ink is adjusted by using the high-viscosity alcohol solvent, and the high-viscosity ink can prevent the solute from moving from the middle to the edge during drying, so that the phenomenon of 'coffee ring' is weakened, and a uniform film is finally obtained. The boiling point of the alcohol solvent is lower than 300 ℃, and the alcohol solvent can be completely removed in a high-temperature annealing process, so that the performance of the oxide film is not influenced. |
priorityDate | 2018-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 169.