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filingDate 2020-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0b3ee9e4d03439da2eda2c31146f59f
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publicationDate 2020-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111370352-A
titleOfInvention Plasma source surface treatment device and method for improving reliability of driving chip
abstract The invention discloses a plasma source surface treatment device and a plasma source surface treatment method for improving the reliability of a driving chip in the field of semiconductor integrated circuits, wherein the device comprises a plasma generator, a reaction chamber is arranged in the plasma generator, the reaction chamber is positioned between two electrodes which are arranged correspondingly, voltage is applied between the two electrodes through a power adapter and a radio frequency power supply, at least two rotating shafts are vertically arranged in the reaction chamber, a plurality of circular rotating discs are arranged on the rotating shafts at intervals along the axial direction, the rotating discs are vertical to the rotating shafts, a plurality of wafer carrying platforms are arranged on the surfaces of the rotating discs, the reaction chamber is respectively connected with a vacuumizing assembly and a process gas conveying assembly, and a wafer loading and unloading mechanism is arranged correspondingly to a door body of the plasma; the method includes placing the wafer into a reaction chamber for nitrogen plasma treatment. The invention can reduce the oxidation of titanium or titanium tungsten of the barrier layer into titanium oxide, thereby achieving the purpose of improving the reliability of the gold bump of the liquid crystal screen driving chip.
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