http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111341926-B

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filingDate 2020-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111341926-B
titleOfInvention QLED device and manufacturing method thereof, display panel, display device
abstract The invention provides a QLED device and a manufacturing method thereof, a display panel, and a display device. The QLED device includes: a quantum dot luminescent layer and an electron transport layer arranged on one side of the quantum dot luminescent layer; the quantum dot luminescent layer contains quantum dot materials, The electron transport layer comprises a heterogeneous multimer, and the heterogeneous multimer is a nanoparticle including at least a first electron transport material and a second electron transport material, the first electron transport material and the second electron transport material are connected by van der Waals force, the first The conduction band energy level of one electron transport material is lower than that of the quantum dot material, and the conduction band energy level of the second electron transport material is higher than that of the first electron transport material. According to the embodiments of the present invention, the difference in the conduction band position of the heteropolymer is used to construct a multi-energy level gradient, so that the electron injection barrier can be reduced and the electron injection ability can be improved when the electrons transition, thereby improving the luminous efficiency and efficiency of the QLED device. life.
priorityDate 2020-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 35.