http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111341926-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
filingDate | 2020-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf89ef6f53cab53632af5f18c4ea69c2 |
publicationDate | 2020-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-111341926-A |
titleOfInvention | QLED device and manufacturing method thereof, display panel, and display device |
abstract | The invention provides a QLED device and a manufacturing method thereof, a display panel and a display device. The QLED device comprises: a quantum dot light-emitting layer and an electron transport layer arranged on one side of the quantum dot light-emitting layer; the quantum dot light-emitting layer comprises quantum dot materials, The electron transport layer comprises a heteromultimer, and the heteromultimer is a nanoparticle comprising at least a first electron transport material and a second electron transport material, the first electron transport material and the second electron transport material are connected by van der Waals force, and the first electron transport material and the second electron transport material are connected by van der Waals force. The conduction band energy level of one electron transport material is lower than that of the quantum dot material, and the conduction band energy level of the second electron transport material is higher than that of the first electron transport material. According to the embodiment of the present invention, the multi-level gradient is constructed by utilizing the difference of the conduction band position of the heteropolymer, so that the electron injection barrier can be reduced and the electron injection capability can be improved during the electron transition, thereby improving the luminous efficiency and luminous efficiency of the QLED device. life. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021143653-A1 |
priorityDate | 2020-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.