http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111326415-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb0b90e30bd927cbbb372c40581029b
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
filingDate 2019-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e47e9af6feac158b413517370adba8f
publicationDate 2020-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111326415-A
titleOfInvention Methods of forming high aspect ratio features in semiconductor wafers
abstract The present invention provides a method for forming a high aspect ratio (High Aspect Ratio, HAR for short) feature in a semiconductor wafer. The method includes the steps of: the wafer is placed in a processing chamber of an etching apparatus; etching the first nitride layer of the wafer towards the first oxide layer of the wafer for a predetermined duration; The second nitride layer is etched, while using the endpoint detector of the etching equipment to monitor the parameters in the processing chamber; the control unit of the etching equipment judges whether the parameters in the processing chamber detected by the endpoint detector exceed a predetermined value; if the endpoint detector If the detected parameter exceeds a predetermined value, the end point of etching of the first oxide layer of the wafer is marked.
priorityDate 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008186473-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015211139-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5980767-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID69636
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID8263
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523397
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546761
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415743364
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6345
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24553
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556964

Total number of triples: 32.