Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_050fc7b82c5d17d9aeb63a7cdcc546b3 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
filingDate |
2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fd5c3e4ca146fea49025bdd056af1c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e67eccd44194147582ce4e763590970c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bce258c85321fd1e5ead5e0b983b1846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c15f782c22569712b272671593128818 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b023d0c1d447f5f649b0ad0c23a51f35 |
publicationDate |
2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-111312801-A |
titleOfInvention |
Semiconductor device including narrow active pattern |
abstract |
A semiconductor device is provided. The semiconductor device includes a gate structure extending in a first direction. The semiconductor device includes an active pattern intersecting the gate structure and having a width in a first direction and a height in a second direction. The width is less than the height. In addition, the semiconductor device includes source/drain regions electrically connected to the active pattern. |
priorityDate |
2018-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |