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filingDate 2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111312801-A
titleOfInvention Semiconductor device including narrow active pattern
abstract A semiconductor device is provided. The semiconductor device includes a gate structure extending in a first direction. The semiconductor device includes an active pattern intersecting the gate structure and having a width in a first direction and a height in a second direction. The width is less than the height. In addition, the semiconductor device includes source/drain regions electrically connected to the active pattern.
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