| abstract |
A method for forming an ultraviolet (UV) radiation responsive metal oxide-containing film is disclosed. The method may include depositing a UV radiation responsive metal oxide-containing film on the substrate by heating the substrate to a deposition temperature below 400° C. to cause the substrate to interact with the substrate including the metal component, the hydrogen component and the contacting a first gas phase reactant of the carbon component and contacting the substrate with a second gas phase reactant comprising an oxygen-containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch after UV irradiation The regions of the UV radiation responsive metal oxide-containing film that are not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate. |