http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111243865-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-20 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-004 |
filingDate | 2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-111243865-B |
titleOfInvention | Quantum dot sensitized cell and preparation method thereof |
abstract | The invention discloses a quantum dot sensitized cell and a preparation method thereof, wherein the quantum dot sensitized cell comprises a photoelectrode, a counter electrode and a quantum dot sensitizer material layer arranged between the photoelectrode and the counter electrode, the quantum dot sensitizer material layer is made of a mixed material consisting of a composite material and quantum dots, the composite material comprises oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, and the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots. According to the invention, the mixed material composed of the composite material and the quantum dots is used as the material of the quantum dot sensitizer material layer of the quantum dot sensitized battery, so that the charge transfer speed of the quantum dot sensitizer material layer can be effectively increased, and the open-circuit voltage of the quantum dot sensitized battery is increased. |
priorityDate | 2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.