http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111235578-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01F2035-98 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D29-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D29-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01F27-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D29-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01F35-92 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D29-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D29-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D29-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01F27-96 |
| filingDate | 2020-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111235578-B |
| titleOfInvention | Etching solution for GaN millimeter wave power amplifier chip production and preparation method thereof |
| abstract | The invention discloses a corrosive liquid for producing GaN millimeter wave power amplifier chips and a preparation method thereof, wherein the corrosive liquid is prepared from the following raw materials in parts by weight: 40-65 parts of acetic acid, 10-35 parts of nitric acid, 1-5 parts of surfactant, 1-5 parts of dispersing agent, 1-5 parts of complexing agent, 4-8 parts of potassium dichromate and 80-100 parts of deionized water. According to the invention, the oxidability of the prepared corrosive liquid is effectively increased by adding the compound mixture of the nonionic surfactant and the anionic surfactant, the raw materials are fully dispersed and mixed in the stirring process by adding the dispersing agent and the complexing agent, and the dosage of the surfactant is reduced by introducing ammonia gas and cooling the inner coil pipe, so that lower tension can be obtained. |
| priorityDate | 2020-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.