abstract |
A metal-dielectric bonding method includes providing a first semiconductor structure including a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal on the first dielectric layer layer, wherein the first metal layer has a metal bonding surface facing away from the first semiconductor layer; planarizing the metal bonding surface; applying a plasma treatment to the metal bonding surface; providing a second semiconductor structure, the second semiconductor The structure includes a second semiconductor layer and a second dielectric layer on the second semiconductor layer, wherein the second dielectric layer has a dielectric bonding surface facing away from the second semiconductor layer; planarizing the dielectric bonding surface; bonding the dielectric surface-applied plasma treatment; and bonding the first semiconductor structure to the second semiconductor structure by bonding the metal bonding surface to the dielectric bonding surface. |