http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111192971-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1b95a0151fe6cf57f119866e3a10c11 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-15 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
filingDate | 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4509c7a5ab39fdf56e4c62b41c80a452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f59d4c50172d1b58a46b8df37874a446 |
publicationDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-111192971-A |
titleOfInvention | Low roll-off quasi-two-dimensional perovskite light-emitting diode and preparation method thereof |
abstract | The invention discloses a low-roll-off quasi-two-dimensional perovskite light-emitting diode and a preparation method thereof. A cathode, a hole transport layer, an interface modification layer between the hole transport layer and the light-emitting layer, and a perovskite light-emitting diode are sequentially arranged from bottom to top. layer, light-emitting layer and electron transport interface modification layer, electron transport layer, electron injection layer, anode. By modifying the interface between the hole transport layer and the perovskite light-emitting layer, the present invention not only reduces the hole injection barrier between the hole layer and the light-emitting layer, improves the hole injection efficiency, but also blocks the hole layer to the perovskite The quenching of the ore layer improves the luminous efficiency of the perovskite layer. The invention also modifies the interface between the perovskite light-emitting layer and the electron transport layer, which can not only passivate the defect state on the perovskite surface, but also improve the film quality of the light-emitting layer and inhibit non-radiative recombination, thereby further improving the luminous efficiency of the device. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113161506-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112382731-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114094022-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112510162-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111785846-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113178523-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112382731-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113178523-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111740019-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112038495-A |
priorityDate | 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.