| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2019-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_677232f8d706ddecaa38e05911ce84ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55a0fb1e612495bd35b5275c3cb4783e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f0540e85f9f9fe74711d29630def8b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbf80f3b6fae3e5a9441f77e29cdffea |
| publicationDate |
2020-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-111180443-A |
| titleOfInvention |
Semiconductor device and chip comprising nanosheet field effect transistor unit architecture |
| abstract |
A semiconductor device and a semiconductor chip are provided. The semiconductor device includes first and second surrounding gate field effect transistors spaced apart by a channel spacing and a gate contact. Each of the wrap-around gate field effect transistors includes: a horizontal nanosheet conductive channel structure; a gate material completely surrounding the horizontal nanosheet conductive channel structure; a source region and a drain region located at opposite ends of the horizontal nanosheet conductive channel structure; and source and drain contacts on the source and drain regions. The width of the horizontal nanosheet conducting channel structure of the first surrounding type gate field effect transistor or the second surrounding type gate field effect transistor is smaller than the maximum allowable width. The gate contact is spaced apart from each of the source and drain regions of the first and second surrounding gate field effect transistors by a distance ranging from a minimum design rule spacing to a maximum distance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021232916-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022036680-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111584486-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111584486-A |
| priorityDate |
2018-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |