http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111180104-B

Outgoing Links

Predicate Object
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-08
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-08
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filingDate 2020-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111180104-B
titleOfInvention Transparent conductive film and preparation method thereof
abstract The invention relates to a transparent conductive film, which is formed by alternately overlapping a plurality of layers of titanium oxide films and a plurality of layers of tantalum oxide films, wherein the ratio of titanium oxide to tantalum oxide is 10: 1-30: 1. the transparent conductive film has low resistivity and excellent performance, and is a brand new metal oxide transparent conductive film material. The invention also comprises a preparation method of the transparent conductive film, which is characterized in that an atomic layer deposition method is used, a plurality of layers of tantalum oxide films are superposed on a plurality of layers of titanium oxide films for a cycle, and the transparent conductive film is obtained after a plurality of cycles are carried out. The atomic layer deposition method can be used for depositing the metal oxide film at low temperature, the proportion of the metal oxides can be accurately controlled through the number of deposited layers, the thickness of the film can be accurately controlled through the number of cycles, the uniformity and the repeatability are good, large-area deposition can be stably carried out, and the conductive film with stable quality can be obtained.
priorityDate 2020-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 49.