| abstract |
One method comprises the following steps: depositing a photonic structure over a substrate, the photonic structure comprising a photonic semiconductor layer, forming a conductive pad over the photonic structure, forming a hard mask over the conductive pad, wherein the hard mask is patterned to cover each conductive pad with a hard mask region, etching the photonic structure using the hard mask as an etch mask to form a plurality of mesa structures protruding from the substrate, each mesa structure comprising portions of the photonic structure, the contact pad, and the hard mask region, depositing a first photoresist over the plurality of mesa structures, depositing a second photoresist over the first photoresist, patterning the second photoresist to expose the hard mask regions of the plurality of mesa structures, and etching the hard mask region to expose portions of the contact pad of the plurality of mesa structures. Embodiments of the invention also relate to semiconductor devices and methods of forming the same. |