http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111129185-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09 |
| filingDate | 2019-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111129185-B |
| titleOfInvention | Different-surface structure GaAs photoconductive switch based on graphene interface layer and preparation process thereof |
| abstract | The invention discloses a different-surface structure GaAs photoconductive switch based on a graphene interface layer and a preparation process thereof. According to the invention, high-quality graphene is transferred to a target substrate, and then metal is plated on the surface of the target substrate to form a gallium arsenide-graphene-metal composite structure, so that an electric field is homogenized, the current is not concentrated, and the generated heat is relatively less, thereby having great effects on heat dissipation and service life of devices. |
| priorityDate | 2019-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.