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publicationDate 2020-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111129013-A
titleOfInvention Semiconductor device having source and drain contacts of different widths
abstract A semiconductor device having source and drain contacts of different widths includes an active region in a substrate. The active region extends in a first direction. The semiconductor device further includes a gate structure extending in a second direction different from the first direction. The gate structure extends across the active region. The semiconductor device further includes a plurality of source/drain contacts extending in the second direction and overlapping the plurality of source/drain regions in the active region on opposite sides of the gate structure. A first source/drain contact of the plurality of source/drain contacts has a first width and a second source/drain contact of the plurality of source/drain contacts has a second width that is less than the first width.
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