Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
filingDate |
2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02a82a479e3d393ddca54893e0d6c076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e7830ff25a8d4306b54486aac55f9ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d96456538d9e1039cec1352534bffae0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6fdbc671ba80ac7c31423da9bfe98fe |
publicationDate |
2020-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-111129013-A |
titleOfInvention |
Semiconductor device having source and drain contacts of different widths |
abstract |
A semiconductor device having source and drain contacts of different widths includes an active region in a substrate. The active region extends in a first direction. The semiconductor device further includes a gate structure extending in a second direction different from the first direction. The gate structure extends across the active region. The semiconductor device further includes a plurality of source/drain contacts extending in the second direction and overlapping the plurality of source/drain regions in the active region on opposite sides of the gate structure. A first source/drain contact of the plurality of source/drain contacts has a first width and a second source/drain contact of the plurality of source/drain contacts has a second width that is less than the first width. |
priorityDate |
2018-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |