http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111128677-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_13609027a9e6a01b9e523f747b7781a2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2019-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0905cba891014e1597e61f117de1028b |
| publicationDate | 2020-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111128677-A |
| titleOfInvention | Surface cleaning treatment method for solar silicon wafer |
| abstract | The invention discloses a surface cleaning treatment method of a solar silicon wafer, which comprises the steps of wetting a cleaning cotton sheet with a cleaning solution, making the cleaning cotton sheet and the surface of the solar silicon wafer to be cleaned move relatively, and wiping and separating dust and viscose on the surface of the solar silicon wafer by using the cleaning cotton sheet; putting the pre-cleaned solar silicon wafer into a constant temperature box, keeping the temperature in the constant temperature box at 25-35 ℃, keeping the temperature for 15-25min at constant temperature, raising the temperature in the constant temperature box to 105 ℃, and drying the solar silicon wafer; placing the dried solar silicon wafer on a feeding device, connecting the feeding device to an automatic inserting device, and transporting the bearing box full of the silicon wafer to the next cleaning procedure; placing the bearing box fully inserted with the silicon wafer into a vacuum pressing furnace, and vacuumizing the vacuum pressing furnace by using a vacuumizing device; introducing hydrogen, helium and argon into a vacuum pressing furnace according to a certain proportion, arranging an ion emission source in the vacuum pressing furnace, and cleaning the surface of the solar silicon wafer for 20-40min by high-energy impact of hydrogen ions, helium ions and argon ions in a vacuum environment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112713083-A |
| priorityDate | 2019-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.