http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111118558-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
filingDate 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111118558-B
titleOfInvention Copper plating additive for semiconductor
abstract The invention relates to the field of electroplating, in particular to a copper plating additive for a semiconductor. The preparation raw materials of the additive at least comprise a component A; according to the mass concentration, the component A comprises 10-60 g/L of polyethylene glycol, 0.01-1 g/L of copper salt, 1-10 g/L of inorganic acid and ultrapure water. The copper plating additive for the semiconductor, which is prepared by the invention, can avoid cavities and gaps generated during electroplating on the surface of a channel with the width of 40-80 nm and the depth of 150-250 nm, can effectively improve the micropore filling efficiency, reduce the working time and reduce the thickness of a plating layer; the copper deposition rate can be improved, the accumulation of a large amount of copper is avoided, and the electroplating efficiency is improved while crystal grains are refined; the method can reduce the cavities generated during electroplating on the surface of the channel and simultaneously avoid local bulge on the surface of the coating. The production process is relatively simple, the reaction conditions are normal temperature and normal pressure, and the three wastes are less discharged in the production process.
priorityDate 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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