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filingDate 2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab995db585ec555df65380ef6ade5b0a
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publicationDate 2020-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111108371-A
titleOfInvention Gas sensor device with high sensitivity at low temperature and method of manufacturing the same
abstract The invention relates to a method for producing a gas sensor (2) comprising the steps of providing a substrate (4) with two coplanar electrodes (6) and forming ZnO nanowires on the two electrodes (6) Network (8) steps. The steps of forming a ZnO nanowire network (8) on the two electrodes (6) are performed as follows: synthesizing ZnO nanowires by a liquid phase sequential growth method; dispersing the synthesized nanowires in a solvent; dropping on the electrodes A solution containing solvent and ZnO nanowires was cast; the solution was dried at a temperature below 85°C. The present invention also relates to a gas sensor that operates at low temperatures, such as room temperature.
priorityDate 2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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