http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111106202-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0617 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-185 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-108 |
| filingDate | 2020-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111106202-B |
| titleOfInvention | Photoelectric detector based on magnesium nitride film and preparation method thereof |
| abstract | A photoelectric detector based on a magnesium nitride film and a preparation method thereof belong to the field of semiconductor photoelectric detectors. Firstly, a layer of transition metal electrode is grown on a substrate by adopting a magnetron sputtering or evaporation technology, an interdigital electrode structure is prepared by utilizing a wet method or a dry etching technology, and then Mg is grown on the substrate with the prepared interdigital electrode structure by adopting a reaction radio frequency magnetron sputtering method 3 N 2 Thin film, finally in Mg 3 N 2 A BN or AlN film is sputtered and grown on the film in situ as Mg 3 N 2 Protective layer to obtain Mg-based 3 N 2 A thin film photodetector device. The invention expands Mg 3 N 2 The preparation method is applied to the field of photoelectric functional materials and devices. BN or AlN film not only effectively inhibits Mg 3 N 2 Hydrolysis of the film increases Mg 3 N 2 The film is stable, transparent in infrared, visible and most ultraviolet bands, and is Mg 3 N 2 An ideal optical window of the photoelectric device. |
| priorityDate | 2020-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.