| abstract |
The invention relates to a method for preparing BiVO 4 hollow cubes by Mo doping induced hydrothermal treatment, belonging to the technical field of semiconductor photocatalytic material preparation, and is characterized by comprising the following steps: using bismuth nitrate pentahydrate and ammonium metavanadate as metal sources, four Ammonium molybdate hydrate was used as a Mo dopant, the addition amount was 7%-9%, and the pH value of the mixed solution was adjusted to 5 with NaOH; the hydrothermal reaction was carried out at 180 ° C for 24 h; At ℃ for 5h, the Mo-doped BiVO 4 hollow cubes were obtained. The Mo-doped BiVO 4 hollow cube prepared by the invention has a controllable morphology and structure, and has the characteristics of simple process and high repeatability. |