| abstract |
III-V semiconductor devices with asymmetric source and drain structures and methods of making the same are described. In an example, an integrated circuit structure includes a gallium arsenide layer on a substrate. The channel structure is on the gallium arsenide layer. The channel structure includes indium, gallium and arsenic. The source structure is at the first end of the channel structure and the drain structure is at the second end of the channel structure. The drain structure has a wider band gap than the source structure. The gate structure is over the channel structure. |