Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L2203-16 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-32 |
filingDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-111051389-B |
titleOfInvention |
Polycarbosilane-containing composition for forming silicon carbide film, and method for producing silicon carbide film using same |
abstract |
[ problem ] to]The invention provides a composition containing polycarbosilane, which has excellent embeddability, can be formed at a lower temperature, and has excellent electrical characteristics of the produced film. [ solution ]]A composition for forming a silicon carbide film, comprising polycarbosilane and a solvent, the polycarbosilane 1 The ratio of the cumulative intensity of 3.92 to 4.20ppm to the cumulative intensity of 3.60 to 5.50ppm in the H-NMR spectrum is 27 to 50%. |
priorityDate |
2017-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |