| abstract |
A method of manufacturing a semiconductor device, comprising: the dummy gate structure is removed to form a gate trench on the semiconductor layer, a high-k gate dielectric layer on the interface layer, wherein the interface layer is exposed in the gate trench, a metal-containing precursor is deposited on the high-k gate dielectric layer to form a metal-containing layer, and then an aluminum-containing precursor is deposited on the metal-containing layer, wherein the deposition of the aluminum-containing precursor forms an aluminum oxide layer at an interface between the high-k gate dielectric layer and the interface layer, and the metal-containing precursor comprises a metal other than aluminum. The method further includes removing a portion of the metal-containing layer after depositing the aluminum-containing precursor, depositing a work function metal layer over a remaining portion of the metal-containing layer, and forming a bulk conductive layer over the work function metal layer to form a metal gate structure. |