| abstract |
The present application provides a method of forming a conformal silicon carbide film by cyclic CVD, in particular to a method of forming a silicon carbide film having a reflectivity of 2.3 or higher as measured at 633 nm on a substrate having a pattern of recesses, It comprises: (i) supplying in pulses an organosilane precursor having the formula RSiH3 , wherein R is a hydrocarbon-containing moiety comprising at least one unsaturated bond, to the reaction space in which the substrate is placed; (ii) to the reaction space in which the substrate is placed; The reaction space is continuously supplied with a plasma-generating gas selected from an inert gas and a hydride gas; (iii) RF power is continuously applied to the reaction space to generate a plasma that excites the precursor; and (iv) steps ( i) to (iii), whereby a silicon carbide film is formed on the substrate, the silicon carbide film having a reflectance of 2.3 or higher as measured at 633 nm. |