| abstract |
Provided herein are compositions and methods of using such compositions to electroplate cobalt onto semiconductor substrate structures including sub-micron sized electrical interconnect features. The interconnect features are metallized by contacting the semiconductor substrate structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one of a depolarizing compound and a uniformity enhancer, or many. A current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill sub-micron sized features with cobalt. The method proposed in this paper can be used to super-fill interconnect features. |