http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111009583-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 |
| filingDate | 2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111009583-B |
| titleOfInvention | Topcon structure battery and preparation method thereof |
| abstract | The invention provides a Topcon structure solar cell and a preparation method thereof. The Topcon structure solar cell comprises a tunneling layer on the back of a silicon wafer, a doped polysilicon layer on the back of the tunneling layer, and a doped polysilicon layer on the back of the doped polysilicon layer. A backside anti-reflection layer, a backside electrode located on the backside of the backside anti-reflection layer; the Topcon structure battery further includes a slurry barrier layer and a backside transparent conductive film located between the doped polysilicon layer and the backside anti-reflection layer , the backside transparent conductive film is located between the paste barrier layer and the doped polysilicon layer, or the backside transparent conductive film is located between the paste barrier layer and the backside anti-reflection layer. In the Topcon structure battery and its preparation method of the present invention, by providing the slurry barrier layer and the back transparent conductive film, the electrode slurry can be prevented from sintering and penetrating the doped polysilicon layer and the tunneling layer, which not only effectively improves the battery structure, but also effectively improves the battery structure. The thickness of the doped polysilicon layer can also be reduced, the cell efficiency can be improved, and the production yield can be improved; meanwhile, the current collection effect can be improved through the backside transparent conductive film. |
| priorityDate | 2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.