http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110970565-A

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filingDate 2018-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_713aa6369c6526cec0ea35b0c8e96928
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publicationDate 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110970565-A
titleOfInvention Quantum dot light-emitting diode and preparation method thereof
abstract The invention belongs to the technical field of display, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a bottom electrode, a top electrode and a quantum dot light-emitting layer disposed between the bottom electrode and the top electrode, and ethyl fibers are provided on the surface of the quantum dot light-emitting layer facing away from the bottom electrode prime layer. The ethyl cellulose layer can protect the quantum dot light-emitting layer, can prevent the quantum dots from being dissolved and destroyed by the functional layer material solvent when the functional layer is prepared on the quantum dot light-emitting layer, and the ethyl cellulose layer will not affect the quantum dot light-emitting layer and the quantum dot light-emitting layer. The carrier transport between the top electrodes, and finally under the protection of this ethylcellulose layer, the luminous efficiency of the device is improved.
priorityDate 2018-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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