http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110921670-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-977 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-977 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
| filingDate | 2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110921670-B |
| titleOfInvention | Silicon carbide and preparation method thereof |
| abstract | The invention relates to the field of high-purity silicon carbide synthesis, and discloses silicon carbide and a preparation method thereof. The method comprises: (1) heating and decomposing the raw material at a thermal decomposition temperature of 600-1200° C. under vacuum conditions or inert gas; (2) filling the product obtained in step (1) with argon or helium, and placing the The synthesis temperature is 1700-2200 DEG C, and the synthesis reaction is carried out to obtain silicon carbide; wherein, the raw material contains at least an organosilicon stereoconfiguration compound, and the molar ratio of carbon to silicon in the raw material is 2-5. The above-mentioned raw materials can be obtained by the above-mentioned method to obtain high-purity and small particle size silicon carbide powder. |
| priorityDate | 2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 121.