http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110911560-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fefd66fdbc3870bbaa8e5a4f87bdb0a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fc6af4606b938dacc1248c4f6537a23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57e5d46a9f123de13f89c1504a794674 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1c16ef2ad9cddc3ec226e3bc4f8b0b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a464430988ab803dce9f129163d8b2fb |
| publicationDate | 2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110911560-A |
| titleOfInvention | A planar memristor and method of making the same |
| abstract | The invention discloses a planar memristor and a preparation method thereof. The structure of the memristor is a planar structure on a substrate, comprising an active electrode at one end, an inert electrode at one end and a two-dimensional atomic crystal in the middle of the electrodes, wherein Two-dimensional atomic crystals are single-crystal IV-VI semiconductors, such as MX (M: Ge, Sn, Pb; X: S, Se), which are fast ion conductors and have a unique wrinkled layered structure. During the action, the oxidized metal cations from the active electrode can rapidly migrate in special channels between layers, vacancies or interfaces of two-dimensional atomic materials to realize a memory with excellent performance such as low power consumption, good cycle consistency, and large on-off ratio. In addition, the preparation method provided by the present invention is simple and feasible, has broad application prospects in resistive memory and artificial synapse devices requiring low power consumption, and also provides a new idea for the preparation of memristors. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113793899-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022227882-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113437216-A |
| priorityDate | 2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.