http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110911518-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1848 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 |
| filingDate | 2019-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110911518-B |
| titleOfInvention | III-nitride semiconductor avalanche photodetector and preparation method thereof |
| abstract | The invention discloses a III-group nitride semiconductor avalanche photodetector and a preparation method thereof, wherein the III-group nitride semiconductor avalanche photodetector comprises an active layer, and the active layer sequentially comprises heavily doped n-type Al according to the growth sequence from bottom to top x Ga 1‑x N ohmic contact layer unintentionally doped with Al y Ga 1‑y N and p-type layers; the p-type layer comprises p-type Al with higher doping concentration from top to bottom y Ga 1‑y N layer and p-type Al with lower doping concentration y Ga 1‑y N layer of p-type Al with lower doping concentration y Ga 1‑y The N layer is of a concave structure with a thin center and a thick edge, and the p-type Al with higher doping concentration y Ga 1‑y The N layer is p-type Al with lower doping concentration y Ga 1‑y N layers of matched convex structures with thick centers and thin edges. Compared with the prior art, the p-type layer can limit a high electric field in the center of the mesa-shaped device, the electric field intensity is reduced at the edge of the mesa-shaped structure, the problem of early breakdown caused by overhigh edge electric field is solved, and the p-type layer has the effects of reducing surface recombination current and improving the working reliability of the device. |
| priorityDate | 2019-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.