http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110911265-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2018-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110911265-A |
| titleOfInvention | Method for removing silicon oxide in titanium nitride generation process |
| abstract | The present invention provides a method for removing silicon oxide in a titanium nitride generation process. The method includes step S1: providing a contact window, the contact window includes a silicon substrate arranged at the bottom of the contact window and a dielectric layer arranged on both sides of the contact window. For the electrical layer, a contact metal layer is deposited on the silicon substrate, and the material of the contact metal layer includes one or more of cobalt, nickel or titanium; step S2: convert the contact metal layer into a silicide metal layer, and the silicide metal layer The material of the layer includes one or more of cobalt silicide, nickel silicide or titanium silicide; step S3: passing ammonia gas on the surface of the silicide metal layer to reduce the silicon oxide layer formed by natural oxidation on the surface of the silicide metal layer; step S4 : A barrier layer is deposited on the surface of the silicide metal layer and the surface of the oxide layer. The invention reduces the contact resistance of the contact window and greatly improves the product yield. |
| priorityDate | 2018-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.