| abstract |
Embodiments of the present disclosure provide aluminum-containing layers and systems and methods for forming aluminum-containing layers. In one embodiment, a deposition method includes: depositing an aluminum-containing layer on a substrate in a chamber by atomic layer deposition, wherein the depositing further comprises: the method includes contacting the substrate with an aluminum-containing precursor in a first pulse having a first peak pulse flow rate and a first pulse width, contacting the substrate with a nitrogen-containing precursor, contacting the substrate with the aluminum-containing precursor in a second pulse having a second peak pulse flow rate and a second pulse width, and contacting the substrate with the nitrogen-containing precursor. The first peak pulse flow rate is greater than the second peak pulse flow rate. The first pulse width is less than the second pulse width. |