| abstract |
The invention discloses a low-B high-resistance wide-temperature-zone high-temperature thermistor material, and a preparation method and application thereof 1‑y Y y MoO 4 ‑xCeNbO 4 (x is more than or equal to 1 and less than or equal to 3, y is more than or equal to 0.01 and less than or equal to 0.2) low-B high-resistance wide-temperature-region high-temperature thermistor material with material constant of B 200℃/600℃ 1800-4000K, 25 deg.C resistivity of 8.0 × 10 5 Ωcm‑6.0×10 7 Omega cm. The low-B high-resistance wide-temperature-zone high-temperature thermistor material prepared by the invention has stable performance and good consistency, has obvious negative temperature coefficient characteristic in the range of 25-1000 ℃, and is suitable for manufacturing wide-temperature-zone high-temperature thermistors. |