http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110880676-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_473f969c6af354a81610b4eb12bb54ab |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-02 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2019-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_876f38da7d73311853dc59aa4fe8cc46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e80ce37f8671f62f3122ec288662cb3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_078f40fe5cad2144dabc294db79ea9a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1295d54ed0bdff5efbef7d6ed5a9f0f2 |
| publicationDate | 2020-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110880676-A |
| titleOfInvention | A kind of preparation method of semiconductor laser |
| abstract | The invention relates to the technical field of semiconductor lasers, in particular to a preparation method of a semiconductor laser. The method includes: providing an epitaxial structure of a stacked semiconductor laser; wherein, the epitaxial structure includes an aluminum-containing epitaxial layer; dry etching the epitaxial structure to form a stripe structure with a steep and smooth sidewall; The strip structure is subjected to wet oxidation, and an oxide medium layer is formed on both sides of the aluminum-containing epitaxial layer; wherein, the oxide medium layer serves as a lateral current confinement layer and a lateral waveguide layer of the stacked semiconductor laser. Through the lateral current confinement layer and the lateral waveguide layer, the lateral expansion of the operating current of the semiconductor laser can be suppressed, so that each layer of the quantum well active region is injected with a consistent current intensity and density, which reduces the threshold current of the laser and suppresses the optical field. Lateral expansion achieves a laser spot of consistent size and intensity. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112531461-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114006268-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112636175-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114300945-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023130711-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114696217-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113991428-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113991428-A |
| priorityDate | 2019-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.