| abstract |
The present application relates to multi-finger diodes with reduced capacitance and methods of making the same. A diode with reduced parasitic capacitance and a method of designing its layout are disclosed. In particular, diodes for providing fast response protection of RF circuits to high power noise events such as ESD, voltage spikes, surges or other noise are disclosed. The parasitic capacitance in the disclosed circuit is greatly reduced compared to the prior art, thus significantly increasing the speed of the response for dissipating all high power noise events. |